Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2

Wen Dong; Wanbiao Hu; Adam Berlie; Kenny Lau; Hua Chen; Ray L. Withers; Yun Liu

doi:10.1021/acsami.5b07467

Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO₂

Wen Dong, Wanbiao Hu^*, Adam Berlie, Kenny Lau, Hua Chen, Ray L. Withers, Yun Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

200 Citations (Scopus)

Abstract

Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO₂, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO₂, i.e., (Ga_0.5Nb_0.5)_xTi_1-xO₂, where Ga³⁺ is from the same group as In³⁺ but with a much smaller ionic radius. Colossal permittivity of up to 10⁴-10⁵ with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

Original language	English
Pages (from-to)	25321-25325
Number of pages	5
Journal	ACS applied materials & interfaces
Volume	7
Issue number	45
DOIs	https://doi.org/10.1021/acsami.5b07467
Publication status	Published - 18 Nov 2015

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title = "Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2",

abstract = "Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga0.5Nb0.5)xTi1-xO2, where Ga3+ is from the same group as In3+ but with a much smaller ionic radius. Colossal permittivity of up to 104-105 with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.",

keywords = "ceramic, colossal permittivity, defect dipole, dielectric properties, rutile TiO",

author = "Wen Dong and Wanbiao Hu and Adam Berlie and Kenny Lau and Hua Chen and Withers, {Ray L.} and Yun Liu",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

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day = "18",

doi = "10.1021/acsami.5b07467",

language = "English",

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T1 - Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2

AU - Dong, Wen

AU - Hu, Wanbiao

AU - Berlie, Adam

AU - Lau, Kenny

AU - Chen, Hua

AU - Withers, Ray L.

AU - Liu, Yun

PY - 2015/11/18

Y1 - 2015/11/18

N2 - Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga0.5Nb0.5)xTi1-xO2, where Ga3+ is from the same group as In3+ but with a much smaller ionic radius. Colossal permittivity of up to 104-105 with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

AB - Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga0.5Nb0.5)xTi1-xO2, where Ga3+ is from the same group as In3+ but with a much smaller ionic radius. Colossal permittivity of up to 104-105 with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

KW - ceramic

KW - colossal permittivity

KW - defect dipole

KW - dielectric properties

KW - rutile TiO

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EP - 25325

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 45

ER -

Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO₂

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