Common structure in amorphised compound semiconductors

M. C. Ridgway; G. D.M. Azevedo; C. J. Glover; K. M. Yu; G. J. Foran

doi:10.1016/S0168-583X(02)01531-8

Common structure in amorphised compound semiconductors

M. C. Ridgway^*, G. D.M. Azevedo, C. J. Glover, K. M. Yu, G. J. Foran

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised ∼18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members.

Original language	English
Pages (from-to)	235-239
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	199
DOIs	https://doi.org/10.1016/S0168-583X(02)01531-8
Publication status	Published - Jan 2003

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title = "Common structure in amorphised compound semiconductors",

abstract = "Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised ∼18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members.",

keywords = "Amorphous compound semiconductors, Ion implantation",

author = "Ridgway, {M. C.} and Azevedo, {G. D.M.} and Glover, {C. J.} and Yu, {K. M.} and Foran, {G. J.}",

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AU - Ridgway, M. C.

AU - Azevedo, G. D.M.

AU - Glover, C. J.

AU - Yu, K. M.

AU - Foran, G. J.

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N2 - Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised ∼18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members.

AB - Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised ∼18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members.

KW - Amorphous compound semiconductors

KW - Ion implantation

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Common structure in amorphised compound semiconductors

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