Compact Brillouin devices through hybrid integration on silicon

Blair Morrison*, Alvaro Casas Bedoya, Guanghui Ren, Khu Vu, Yang Liu, Atiyeh Zarifi, Thach G. Nguyen, Duk Yong Choi, David Marpaung, Stephen J. Madden, Arnan Mitchell, Benjamin J. Eggleton

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    162 Citations (Scopus)


    A range of unique capabilities in optical and microwave signal processing and generation have been demonstrated using stimulated Brillouin scattering (SBS). The need to harness SBS in mass-manufacturable integrated circuits has led to a focus on silicon-based material platforms. Remarkable progress in silicon-based Brillouin waveguides has been made, but results have been hindered by nonlinear losses present at telecommunications wavelengths. Here, we report on a new approach to surpass this issue through the integration of a high Brillouin gain material, As2S3, onto a siliconbased chip. We fabricated a compact spiral device within a silicon circuit, achieving an order-of-magnitude improvement in Brillouin amplification. To establish the flexibility of this approach, we fabricated a ring resonator with free spectral range precisely matched to the Brillouin shift, enabling the first demonstration, to our knowledge, of Brillouin lasing in a planar integrated circuit. Combining active photonic components with the SBS devices shown here will enable the creation of compact, mass-manufacturable optical circuits with enhanced functionalities.

    Original languageEnglish
    Pages (from-to)847-854
    Number of pages8
    Issue number8
    Publication statusPublished - 20 Aug 2017


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