Comparative studies using EXAFS and PAC of lattice damage in semiconductors

A. P. Byrne; M. C. Ridgway; C. J. Glover; E. Bezakova

doi:10.1007/s10751-005-9040-4

Comparative studies using EXAFS and PAC of lattice damage in semiconductors

A. P. Byrne^*, M. C. Ridgway, C. J. Glover, E. Bezakova

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.

Original language	English
Pages (from-to)	245-254
Number of pages	10
Journal	Hyperfine Interactions
Volume	158
Issue number	1-4
DOIs	https://doi.org/10.1007/s10751-005-9040-4
Publication status	Published - Nov 2004

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title = "Comparative studies using EXAFS and PAC of lattice damage in semiconductors",

abstract = "We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.",

keywords = "Amorphisation, Extended X-ray absorption fine structure spectroscopy (EXAFS), Ion-beam induced damage, Perturbed Angular Correlation (PAC), Semiconductor materials",

author = "Byrne, {A. P.} and Ridgway, {M. C.} and Glover, {C. J.} and E. Bezakova",

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AU - Byrne, A. P.

AU - Ridgway, M. C.

AU - Glover, C. J.

AU - Bezakova, E.

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N2 - We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.

AB - We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.

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KW - Extended X-ray absorption fine structure spectroscopy (EXAFS)

KW - Ion-beam induced damage

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KW - Semiconductor materials

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EP - 254

JO - Hyperfine Interactions

JF - Hyperfine Interactions

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Comparative studies using EXAFS and PAC of lattice damage in semiconductors

Abstract

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