Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

S. Fatima; J. Wong-Leung; J. Fitzgerald; C. Jagadish

doi:10.1109/COMMAD.1998.791701

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

S. Fatima^*, J. Wong-Leung, J. Fitzgerald, C. Jagadish

^*Corresponding author for this work

Research School of Earth Sciences

Research output: Contribution to conference › Paper › peer-review

Abstract

Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or critical dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this dose. DLTS observation correlates well with the TEM analysis; for the doses above critical dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the doses were adjusted to create a similar damage distribution for all the implanted ions.

Original language	English
Pages	505-508
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.1998.791701
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998

Conference

Conference	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	14/12/98 → 16/12/98

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10.1109/COMMAD.1998.791701

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Fatima, S., Wong-Leung, J., Fitzgerald, J., & Jagadish, C. (1999). Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions. 505-508. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust. https://doi.org/10.1109/COMMAD.1998.791701

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title = "Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions",

abstract = "Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or critical dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this dose. DLTS observation correlates well with the TEM analysis; for the doses above critical dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the doses were adjusted to create a similar damage distribution for all the implanted ions.",

author = "S. Fatima and J. Wong-Leung and J. Fitzgerald and C. Jagadish",

year = "1999",

doi = "10.1109/COMMAD.1998.791701",

language = "English",

pages = "505--508",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

Fatima, S, Wong-Leung, J, Fitzgerald, J & Jagadish, C 1999, 'Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions', Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 14/12/98 - 16/12/98 pp. 505-508. https://doi.org/10.1109/COMMAD.1998.791701

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions. / Fatima, S.; Wong-Leung, J.; Fitzgerald, J. et al.
1999. 505-508 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

AU - Fatima, S.

AU - Wong-Leung, J.

AU - Fitzgerald, J.

AU - Jagadish, C.

PY - 1999

Y1 - 1999

N2 - Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or critical dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this dose. DLTS observation correlates well with the TEM analysis; for the doses above critical dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the doses were adjusted to create a similar damage distribution for all the implanted ions.

AB - Sub-threshold damage in n and p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Irrespective of the ion mass, DLTS spectra show a transition or critical dose below which point defects in p-type Si and no electrically active defects in n-type Si are transformed in to extended defect signatures above this dose. DLTS observation correlates well with the TEM analysis; for the doses above critical dose extended defects are observed. Furthermore, mass of the implanted ion has been found effecting the type of extended defects even though the doses were adjusted to create a similar damage distribution for all the implanted ions.

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DO - 10.1109/COMMAD.1998.791701

M3 - Paper

AN - SCOPUS:0032684580

SP - 505

EP - 508

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

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