@inproceedings{cf8bbebf4db34d11b23e1c22077c8d9c,
title = "Comparison between implanted boron and phosphorus in silicon wafers",
abstract = "The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.",
author = "Burgess, {J. E.} and Johnson, {B. C.} and Villis, {B. J.} and McCallum, {J. C.} and S. Charnvanichborikarn and J. Wong-Leung and Williams, {J. S.}",
year = "2010",
doi = "10.1109/COMMAD.2010.5699752",
language = "English",
isbn = "9781424473328",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
pages = "225--226",
booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",
note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",
}