Comparison between implanted boron and phosphorus in silicon wafers

J. E. Burgess, B. C. Johnson, B. J. Villis, J. C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, J. S. Williams

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (Scopus)

    Abstract

    The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.

    Original languageEnglish
    Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
    Pages225-226
    Number of pages2
    DOIs
    Publication statusPublished - 2010
    Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
    Duration: 12 Dec 201015 Dec 2010

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

    Conference

    Conference2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
    Country/TerritoryAustralia
    CityCanberra, ACT
    Period12/12/1015/12/10

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