Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices

Q. Gao; M. Buda; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2004.1577479

Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices

Q. Gao^*, M. Buda, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	9-12
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577479
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

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Gao, Q., Buda, M., Tan, H. H., & Jagadish, C. (2005). Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 9-12). Article 1577479 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577479

@inproceedings{31245120d05b4fea9086dc9bac567ee4,

title = "Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices",

abstract = "An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.",

keywords = "InGaAsN, MOCVD, Photocurrent, Quantum dot laser",

author = "Q. Gao and M. Buda and Tan, {H. H.} and C. Jagadish",

year = "2005",

doi = "10.1109/COMMAD.2004.1577479",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "9--12",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Gao, Q, Buda, M, Tan, HH & Jagadish, C 2005, Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577479, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 9-12, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577479

Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices. / Gao, Q.; Buda, M.; Tan, H. H. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 9-12 1577479 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices

AU - Gao, Q.

AU - Buda, M.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005

Y1 - 2005

N2 - An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.

AB - An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer.

KW - InGaAsN

KW - MOCVD

KW - Photocurrent

KW - Quantum dot laser

UR - http://www.scopus.com/inward/record.url?scp=46149115398&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2004.1577479

DO - 10.1109/COMMAD.2004.1577479

M3 - Conference contribution

SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 9

EP - 12

BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices

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