Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

M. L. Smith; R. Mendis; R. E.M. Vickers; R. A. Lewis

doi:10.1063/1.3095758

Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

M. L. Smith, R. Mendis, R. E.M. Vickers, R. A. Lewis

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

P -type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98±10 nW in this experiment.

Original language	English
Article number	063109
Journal	Journal of Applied Physics
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.3095758
Publication status	Published - 2009

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abstract = "P -type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98±10 nW in this experiment.",

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AB - P -type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98±10 nW in this experiment.

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JO - Journal of Applied Physics

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ER -

Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

Abstract

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