Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

Sichao Du; L. Fu; H. H. Tan; C. Jagadish

doi:10.1109/ICONN.2008.4639238

Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

Sichao Du^*, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

Original language	English
Title of host publication	Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
Pages	32-35
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2008.4639238
Publication status	Published - 2008
Event	2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008 - Melbourne, VIC, Australia Duration: 25 Feb 2008 → 29 Feb 2008

Publication series

Name	Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

Conference

Conference	2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008
Country/Territory	Australia
City	Melbourne, VIC
Period	25/02/08 → 29/02/08

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10.1109/ICONN.2008.4639238

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Du, S., Fu, L., Tan, H. H., & Jagadish, C. (2008). Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells. In Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008 (pp. 32-35). Article 4639238 (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008). https://doi.org/10.1109/ICONN.2008.4639238

Du, Sichao ; Fu, L. ; Tan, H. H. et al. / Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells. Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008. 2008. pp. 32-35 (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008).

@inproceedings{6c2097a642464918843a44ff7633281f,

title = "Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells",

abstract = "In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.",

keywords = "Interdiffusion, Ion implantation, Photoluminescence, Quantum well intermixing",

author = "Sichao Du and L. Fu and Tan, {H. H.} and C. Jagadish",

year = "2008",

doi = "10.1109/ICONN.2008.4639238",

language = "English",

isbn = "1424415047",

series = "Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008",

pages = "32--35",

booktitle = "Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008",

note = "2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008 ; Conference date: 25-02-2008 Through 29-02-2008",

}

Du, S, Fu, L , Tan, HH & Jagadish, C 2008, Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells. in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008., 4639238, Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 32-35, 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, Melbourne, VIC, Australia, 25/02/08. https://doi.org/10.1109/ICONN.2008.4639238

Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells. / Du, Sichao; Fu, L.; Tan, H. H. et al.
Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008. 2008. p. 32-35 4639238 (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

AU - Du, Sichao

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2008

Y1 - 2008

N2 - In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

AB - In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

KW - Interdiffusion

KW - Ion implantation

KW - Photoluminescence

KW - Quantum well intermixing

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U2 - 10.1109/ICONN.2008.4639238

DO - 10.1109/ICONN.2008.4639238

M3 - Conference contribution

SN - 1424415047

SN - 9781424415045

T3 - Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

SP - 32

EP - 35

BT - Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

T2 - 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008

Y2 - 25 February 2008 through 29 February 2008

ER -

Du S, Fu L , Tan HH , Jagadish C. Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells. In Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008. 2008. p. 32-35. 4639238. (Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008). doi: 10.1109/ICONN.2008.4639238

Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

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