Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide

Mark Kerr, Jan Schmidt, Andres Cuevas

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)

    Abstract

    Plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate both the front and rear surface of simplified PERC silicon solar cells (planar surface, single-step emitter). An independently confirmed open circuit voltage (Voc) of 667 mV was measured, proving the outstanding surface passivation provided by the silicon nitride films. The achieved Voc represents a significant improvement for all-SiN passivated silicon solar cells. A conversion efficiency of 17.8% was obtained. For comparison, similar cells with different passivation schemes, including high quality, thermally grown TCA oxides and thin SiO2/SiN double layers, were also investigated. Open circuit voltages up to 673 mV and conversion efficiencies up to 18.3% were achieved.

    Original languageEnglish
    Pages (from-to)529-536
    Number of pages8
    JournalProgress in Photovoltaics: Research and Applications
    Volume8
    Issue number5
    DOIs
    Publication statusPublished - Sept 2000

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