Composition-dependent bond lengths in crystalline and amorphized (formula presented) alloys

M. C. Ridgway, K. M. Yu, C. J. Glover, G. J. Foran, C. Clerc, J. L. Hansen, A. N. Larsen

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    40 Citations (Scopus)

    Abstract

    Extended x-ray-absorption fine-structure has been utilized to measure the composition dependence of the Ge-Ge and Ge-Si bond lengths in both crystalline and amorphous (Formula presented) alloys. Utilizing a new sample preparation technique, transmission measurements were performed over greater ranges of photoelectron momentum and composition and with lesser uncertainty than previously reported. As a consequence, the proposed increase in bond length as a function of Ge composition has been unambiguously verified for the crystalline (Formula presented) alloys. For amorphous material, experimental results were also consistent with a bond length composition dependence and a phase-independent topological rigidity parameter. Though of greater uncertainty, the experimental values of Ge-Si bond length exhibited a lesser composition dependence than the Ge-Ge results.

    Original languageEnglish
    Pages (from-to)10831-10836
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume60
    Issue number15
    DOIs
    Publication statusPublished - 1999

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