Abstract
Extended x-ray-absorption fine-structure has been utilized to measure the composition dependence of the Ge-Ge and Ge-Si bond lengths in both crystalline and amorphous (Formula presented) alloys. Utilizing a new sample preparation technique, transmission measurements were performed over greater ranges of photoelectron momentum and composition and with lesser uncertainty than previously reported. As a consequence, the proposed increase in bond length as a function of Ge composition has been unambiguously verified for the crystalline (Formula presented) alloys. For amorphous material, experimental results were also consistent with a bond length composition dependence and a phase-independent topological rigidity parameter. Though of greater uncertainty, the experimental values of Ge-Si bond length exhibited a lesser composition dependence than the Ge-Ge results.
| Original language | English |
|---|---|
| Pages (from-to) | 10831-10836 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 60 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1999 |
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