Skip to main navigation Skip to search Skip to main content

Composition-dependent bond lengths in crystalline and amorphized (formula presented) alloys

  • M. C. Ridgway
  • , K. M. Yu
  • , C. J. Glover
  • , G. J. Foran
  • , C. Clerc
  • , J. L. Hansen
  • , A. N. Larsen

    Research output: Contribution to journalArticlepeer-review

    42 Citations (Scopus)

    Abstract

    Extended x-ray-absorption fine-structure has been utilized to measure the composition dependence of the Ge-Ge and Ge-Si bond lengths in both crystalline and amorphous (Formula presented) alloys. Utilizing a new sample preparation technique, transmission measurements were performed over greater ranges of photoelectron momentum and composition and with lesser uncertainty than previously reported. As a consequence, the proposed increase in bond length as a function of Ge composition has been unambiguously verified for the crystalline (Formula presented) alloys. For amorphous material, experimental results were also consistent with a bond length composition dependence and a phase-independent topological rigidity parameter. Though of greater uncertainty, the experimental values of Ge-Si bond length exhibited a lesser composition dependence than the Ge-Ge results.

    Original languageEnglish
    Pages (from-to)10831-10836
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume60
    Issue number15
    DOIs
    Publication statusPublished - 1999

    Fingerprint

    Dive into the research topics of 'Composition-dependent bond lengths in crystalline and amorphized (formula presented) alloys'. Together they form a unique fingerprint.

    Cite this