Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

Prakash N.K. Deenapanray; M. Petravić; K. J. Kim; B. Kim; G. Li

doi:10.1063/1.1626792

Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

Prakash N.K. Deenapanray^*, M. Petravić, K. J. Kim, B. Kim, G. Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Changes in surface stoichiometry of GaN under the low-energy Ar bombardment were followed. Both core-level photoemission spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy were employed to characterize the bombardment surface. The formation of a Ga-rich surface associated with the formation of metallic Ga and nitrogen interstitials, N_i, was observed.

Original language	English
Pages (from-to)	4948-4950
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1626792
Publication status	Published - 15 Dec 2003

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@article{00e2a4f5574849ef84d8161d68d3de7b,

title = "Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies",

abstract = "Changes in surface stoichiometry of GaN under the low-energy Ar bombardment were followed. Both core-level photoemission spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy were employed to characterize the bombardment surface. The formation of a Ga-rich surface associated with the formation of metallic Ga and nitrogen interstitials, Ni, was observed.",

author = "Deenapanray, {Prakash N.K.} and M. Petravi{\'c} and Kim, {K. J.} and B. Kim and G. Li",

year = "2003",

month = dec,

day = "15",

doi = "10.1063/1.1626792",

language = "English",

volume = "83",

pages = "4948--4950",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

AU - Deenapanray, Prakash N.K.

AU - Petravić, M.

AU - Kim, K. J.

AU - Kim, B.

AU - Li, G.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - Changes in surface stoichiometry of GaN under the low-energy Ar bombardment were followed. Both core-level photoemission spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy were employed to characterize the bombardment surface. The formation of a Ga-rich surface associated with the formation of metallic Ga and nitrogen interstitials, Ni, was observed.

AB - Changes in surface stoichiometry of GaN under the low-energy Ar bombardment were followed. Both core-level photoemission spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy were employed to characterize the bombardment surface. The formation of a Ga-rich surface associated with the formation of metallic Ga and nitrogen interstitials, Ni, was observed.

UR - http://www.scopus.com/inward/record.url?scp=0346038796&partnerID=8YFLogxK

U2 - 10.1063/1.1626792

DO - 10.1063/1.1626792

M3 - Article

SN - 0003-6951

VL - 83

SP - 4948

EP - 4950

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

Abstract

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