Compound semiconductor nanowires for next generation optoelectronics

C. Jagadsih

doi:10.1109/PHOSST.2010.5553657

Compound semiconductor nanowires for next generation optoelectronics

C. Jagadsih^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi-cal vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be dis-cussed in this talk.

Original language	English
Title of host publication	2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010
Pages	106
Number of pages	1
DOIs	https://doi.org/10.1109/PHOSST.2010.5553657
Publication status	Published - 2010
Event	2010 IEEE Photonics Society Summer Topical Meeting, PHOSST 2010 - Playa del Carmen, Mexico Duration: 19 Jul 2010 → 21 Jul 2010

Publication series

Name	2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010

Conference

Conference	2010 IEEE Photonics Society Summer Topical Meeting, PHOSST 2010
Country/Territory	Mexico
City	Playa del Carmen
Period	19/07/10 → 21/07/10

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10.1109/PHOSST.2010.5553657

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title = "Compound semiconductor nanowires for next generation optoelectronics",

abstract = "GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi-cal vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be dis-cussed in this talk.",

author = "C. Jagadsih",

year = "2010",

doi = "10.1109/PHOSST.2010.5553657",

language = "English",

isbn = "9781424437306",

series = "2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010",

pages = "106",

booktitle = "2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010",

note = "2010 IEEE Photonics Society Summer Topical Meeting, PHOSST 2010 ; Conference date: 19-07-2010 Through 21-07-2010",

}

Jagadsih, C 2010, Compound semiconductor nanowires for next generation optoelectronics. in 2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010., 5553657, 2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010, pp. 106, 2010 IEEE Photonics Society Summer Topical Meeting, PHOSST 2010, Playa del Carmen, Mexico, 19/07/10. https://doi.org/10.1109/PHOSST.2010.5553657

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AU - Jagadsih, C.

PY - 2010

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N2 - GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi-cal vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be dis-cussed in this talk.

AB - GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi-cal vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be dis-cussed in this talk.

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U2 - 10.1109/PHOSST.2010.5553657

DO - 10.1109/PHOSST.2010.5553657

M3 - Conference contribution

SN - 9781424437306

T3 - 2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010

SP - 106

BT - 2010 IEEE Photonics Society Summer Topical Meeting Series, PHOSST 2010

T2 - 2010 IEEE Photonics Society Summer Topical Meeting, PHOSST 2010

Y2 - 19 July 2010 through 21 July 2010

ER -

Compound semiconductor nanowires for next generation optoelectronics

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