Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures

A. S. Berdinsky, D. Fink, J. B. Yoo, H. G. Chun*, L. T. Chadderton, A. V. Petrov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.

Original languageEnglish
Pages (from-to)1711-1715
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume80
Issue number8
DOIs
Publication statusPublished - May 2005
Externally publishedYes

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