Abstract
Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.
Original language | English |
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Pages (from-to) | 1711-1715 |
Number of pages | 5 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 80 |
Issue number | 8 |
DOIs | |
Publication status | Published - May 2005 |
Externally published | Yes |