Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures

A. S. Berdinsky; D. Fink; J. B. Yoo; H. G. Chun; L. T. Chadderton; A. V. Petrov

doi:10.1007/s00339-004-3088-x

Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures

A. S. Berdinsky, D. Fink, J. B. Yoo, H. G. Chun^*, L. T. Chadderton, A. V. Petrov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Au/C₆₀/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C₆₀) film on a silicon substrate and a thin Au film on top of the C₆₀ film. In this case a C ₆₀/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C₆₀/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.

Original language	English
Pages (from-to)	1711-1715
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	80
Issue number	8
DOIs	https://doi.org/10.1007/s00339-004-3088-x
Publication status	Published - May 2005
Externally published	Yes

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title = "Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures",

abstract = "Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.",

author = "Berdinsky, \{A. S.\} and D. Fink and Yoo, \{J. B.\} and Chun, \{H. G.\} and Chadderton, \{L. T.\} and Petrov, \{A. V.\}",

year = "2005",

month = may,

doi = "10.1007/s00339-004-3088-x",

language = "English",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures

AU - Berdinsky, A. S.

AU - Fink, D.

AU - Yoo, J. B.

AU - Chun, H. G.

AU - Chadderton, L. T.

AU - Petrov, A. V.

PY - 2005/5

Y1 - 2005/5

N2 - Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.

AB - Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.

UR - https://www.scopus.com/pages/publications/17444405643

U2 - 10.1007/s00339-004-3088-x

DO - 10.1007/s00339-004-3088-x

M3 - Article

SN - 0947-8396

VL - 80

SP - 1711

EP - 1715

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 8

ER -

Conducting properties of planar irradiated and pristine silicon-fullerite-metal structures

Abstract

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