Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells

Kean Chern Fong; Teng Choon Kho; Andreas Fell; Evan Franklin; Ngwe Zin; Andrew W. Blakers; Keith R. McIntosh; Thomas Ratcliff; Matthew Stocks; James Bullock; Er Chien Wang

doi:10.1109/JPHOTOV.2015.2438643

Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells

Kean Chern Fong, Teng Choon Kho, Andreas Fell, Evan Franklin, Ngwe Zin, Andrew W. Blakers, Keith R. McIntosh, Thomas Ratcliff, Matthew Stocks, James Bullock, Er Chien Wang

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The contact resistivity of evaporated Al on doped silicon is examined for a range of process conditions common to the fabrication of laboratory silicon solar cells. The effects of silicon surface preparation prior to evaporation, sintering temperature, the use of a shutter, and evaporation power are investigated. The presented evaporation conditions yielded the lowest published contact resistivity between Al-and phosphorus-doped Si over a large range of doping concentration. It is also demonstrated that a contact resistivity below 10^-6 Ω.cm ² can be achieved without sintering. Three-dimensional simulations are utilized to compare the obtained results for evaporated Al contacts with those for passivated contacts.

Original language	English
Article number	7167674
Pages (from-to)	1304-1309
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2438643
Publication status	Published - 1 Sept 2015

Access to Document

10.1109/JPHOTOV.2015.2438643

Cite this

@article{0effa3412ad949c58c60c900c31b59cd,

title = "Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells",

abstract = "The contact resistivity of evaporated Al on doped silicon is examined for a range of process conditions common to the fabrication of laboratory silicon solar cells. The effects of silicon surface preparation prior to evaporation, sintering temperature, the use of a shutter, and evaporation power are investigated. The presented evaporation conditions yielded the lowest published contact resistivity between Al-and phosphorus-doped Si over a large range of doping concentration. It is also demonstrated that a contact resistivity below 10-6 Ω.cm 2 can be achieved without sintering. Three-dimensional simulations are utilized to compare the obtained results for evaporated Al contacts with those for passivated contacts.",

keywords = "Contact resistance, Simulation, metal contacts, photovoltaic cells, silicon solar cells",

author = "Fong, {Kean Chern} and Kho, {Teng Choon} and Andreas Fell and Evan Franklin and Ngwe Zin and Blakers, {Andrew W.} and McIntosh, {Keith R.} and Thomas Ratcliff and Matthew Stocks and James Bullock and Wang, {Er Chien}",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2015",

month = sep,

day = "1",

doi = "10.1109/JPHOTOV.2015.2438643",

language = "English",

volume = "5",

pages = "1304--1309",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "5",

}

TY - JOUR

T1 - Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells

AU - Fong, Kean Chern

AU - Kho, Teng Choon

AU - Fell, Andreas

AU - Franklin, Evan

AU - Zin, Ngwe

AU - Blakers, Andrew W.

AU - McIntosh, Keith R.

AU - Ratcliff, Thomas

AU - Stocks, Matthew

AU - Bullock, James

AU - Wang, Er Chien

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The contact resistivity of evaporated Al on doped silicon is examined for a range of process conditions common to the fabrication of laboratory silicon solar cells. The effects of silicon surface preparation prior to evaporation, sintering temperature, the use of a shutter, and evaporation power are investigated. The presented evaporation conditions yielded the lowest published contact resistivity between Al-and phosphorus-doped Si over a large range of doping concentration. It is also demonstrated that a contact resistivity below 10-6 Ω.cm 2 can be achieved without sintering. Three-dimensional simulations are utilized to compare the obtained results for evaporated Al contacts with those for passivated contacts.

AB - The contact resistivity of evaporated Al on doped silicon is examined for a range of process conditions common to the fabrication of laboratory silicon solar cells. The effects of silicon surface preparation prior to evaporation, sintering temperature, the use of a shutter, and evaporation power are investigated. The presented evaporation conditions yielded the lowest published contact resistivity between Al-and phosphorus-doped Si over a large range of doping concentration. It is also demonstrated that a contact resistivity below 10-6 Ω.cm 2 can be achieved without sintering. Three-dimensional simulations are utilized to compare the obtained results for evaporated Al contacts with those for passivated contacts.

KW - Contact resistance

KW - Simulation

KW - metal contacts

KW - photovoltaic cells

KW - silicon solar cells

UR - http://www.scopus.com/inward/record.url?scp=84940028073&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2015.2438643

DO - 10.1109/JPHOTOV.2015.2438643

M3 - Article

SN - 2156-3381

VL - 5

SP - 1304

EP - 1309

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 5

M1 - 7167674

ER -

Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this