Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure

Engineering the surface energy, interface energy, and elastic strain energy in the system via Sb exposure is used to realize the control on the morphology and optical properties of self-assembled InP-based InAsSb/InGaAs nanostructures. By flowing trimethylantimony precursor over the surface of InGaAs buffer layer before the growth of InAsSb nanostructures, the surface/interface energy in the system is reduced, while the strain energy in the system is enhanced, which lead to a shape transition from dot to dash, and to wire for the InAsSb nanostructures. As a result of their morphology changes, the InAsSb nanostructures show different polarization characteristics in their photoluminescence emission.