Controlling the properties of InGaAs quantum dots by selective-area epitaxy

S. Mokkapati; P. Lever; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1063/1.1875745

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

S. Mokkapati^*, P. Lever, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved.

Original language	English
Article number	113102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.1875745
Publication status	Published - 14 Mar 2005

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10.1063/1.1875745

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title = "Controlling the properties of InGaAs quantum dots by selective-area epitaxy",

abstract = "Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved.",

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AU - Mokkapati, S.

AU - Lever, P.

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AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

PY - 2005/3/14

Y1 - 2005/3/14

N2 - Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved.

AB - Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

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Controlling the properties of InGaAs quantum dots by selective-area epitaxy

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