Correlating properties of PECVD SiNx layers to deposition parameters

K. Vora; K. Belay; D. J. Pyke; F. Karouta; C. Jagadish

doi:10.1109/COMMAD.2010.5699737

Correlating properties of PECVD SiN_x layers to deposition parameters

K. Vora^*, K. Belay, D. J. Pyke, F. Karouta, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a comprehensive study of the properties of SiN_x layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH₄ flow, RF power, LF/HF powers ratio and deposition temperature.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	197-198
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699737
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Access to Document

10.1109/COMMAD.2010.5699737

Cite this

Vora, K., Belay, K., Pyke, D. J., Karouta, F., & Jagadish, C. (2010). Correlating properties of PECVD SiN_x layers to deposition parameters. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 197-198). Article 5699737 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699737

@inproceedings{65687c43f782428a8385e4ff43fd30fe,

title = "Correlating properties of PECVD SiNx layers to deposition parameters",

abstract = "We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature.",

author = "K. Vora and K. Belay and Pyke, {D. J.} and F. Karouta and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699737",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "197--198",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Vora, K, Belay, K, Pyke, DJ, Karouta, F & Jagadish, C 2010, Correlating properties of PECVD SiN_x layers to deposition parameters. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699737, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 197-198, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699737

Correlating properties of PECVD SiN_x layers to deposition parameters. / Vora, K.; Belay, K.; Pyke, D. J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 197-198 5699737 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Correlating properties of PECVD SiNx layers to deposition parameters

AU - Vora, K.

AU - Belay, K.

AU - Pyke, D. J.

AU - Karouta, F.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

N2 - We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature.

AB - We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature.

UR - http://www.scopus.com/inward/record.url?scp=79951732877&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699737

DO - 10.1109/COMMAD.2010.5699737

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 197

EP - 198

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Vora K, Belay K, Pyke DJ, Karouta F, Jagadish C. Correlating properties of PECVD SiN_x layers to deposition parameters. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 197-198. 5699737. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699737