Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching

S. A. Rizvi; P. D. Maguire; C. M.O. Mahony; O. A. Okpalugo; C. S. Corr; W. G. Graham; S. M. Morley

doi:10.1002/pssc.200390002

Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl₂ plasma etching

S. A. Rizvi^*, P. D. Maguire, C. M.O. Mahony, O. A. Okpalugo, C. S. Corr, W. G. Graham, S. M. Morley

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The etching of GaN was investigated in an Ar/Cl₂ inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl₂ plasma characteristics. Etch rates of ≈500 nm/min were obtained at relatively low Cl₂ fractions of ≈50%. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl₂, the significance of ion-based processes cannot be ruled out.

Original language	English
Pages (from-to)	112-115
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390002
Publication status	Published - 1 Dec 2002
Externally published	Yes
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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@article{d55648ec2d834268a8d01c242d71f04a,

title = "Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching",

abstract = "The etching of GaN was investigated in an Ar/Cl2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl2 plasma characteristics. Etch rates of ≈500 nm/min were obtained at relatively low Cl2 fractions of ≈50%. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl2, the significance of ion-based processes cannot be ruled out.",

author = "Rizvi, {S. A.} and Maguire, {P. D.} and Mahony, {C. M.O.} and Okpalugo, {O. A.} and Corr, {C. S.} and Graham, {W. G.} and Morley, {S. M.}",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/pssc.200390002",

language = "English",

pages = "112--115",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

}

TY - JOUR

T1 - Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching

AU - Rizvi, S. A.

AU - Maguire, P. D.

AU - Mahony, C. M.O.

AU - Okpalugo, O. A.

AU - Corr, C. S.

AU - Graham, W. G.

AU - Morley, S. M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The etching of GaN was investigated in an Ar/Cl2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl2 plasma characteristics. Etch rates of ≈500 nm/min were obtained at relatively low Cl2 fractions of ≈50%. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl2, the significance of ion-based processes cannot be ruled out.

AB - The etching of GaN was investigated in an Ar/Cl2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl2 plasma characteristics. Etch rates of ≈500 nm/min were obtained at relatively low Cl2 fractions of ≈50%. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl2, the significance of ion-based processes cannot be ruled out.

UR - http://www.scopus.com/inward/record.url?scp=18744416226&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390002

DO - 10.1002/pssc.200390002

M3 - Conference article

SN - 1610-1634

SP - 112

EP - 115

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl₂ plasma etching

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