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Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Michele B. Rota, Amira S. Ameruddin, Jennifer Wong-Leung, Abderrezak Belabbes, Qiang Gao, Antonio Miriametro, Francesco Mura, Hark Hoe Tan, Antonio Polimeni, Friedhelm Bechstedt, Chennupati Jagadish, Mario Capizzi*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

    Original languageEnglish
    Pages (from-to)16650-16656
    Number of pages7
    JournalJournal of Physical Chemistry C
    Volume121
    Issue number30
    DOIs
    Publication statusPublished - 3 Aug 2017

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