Crystal growth and equilibrium crystal shapes of silicon in the melt

Xinbo Yang; K. Fujiwara; K. Maeda; J. Nozawa; H. Koizumi; S. Uda

doi:10.1002/pip.2290

Crystal growth and equilibrium crystal shapes of silicon in the melt

Xinbo Yang^*, K. Fujiwara, K. Maeda, J. Nozawa, H. Koizumi, S. Uda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

Original language	English
Pages (from-to)	574-580
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	22
Issue number	5
DOIs	https://doi.org/10.1002/pip.2290
Publication status	Published - 1 May 2014

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10.1002/pip.2290

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title = "Crystal growth and equilibrium crystal shapes of silicon in the melt",

abstract = "The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.",

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author = "Xinbo Yang and K. Fujiwara and K. Maeda and J. Nozawa and H. Koizumi and S. Uda",

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T1 - Crystal growth and equilibrium crystal shapes of silicon in the melt

AU - Yang, Xinbo

AU - Fujiwara, K.

AU - Maeda, K.

AU - Nozawa, J.

AU - Koizumi, H.

AU - Uda, S.

PY - 2014/5/1

Y1 - 2014/5/1

N2 - The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

AB - The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface.

KW - crystal growth shape

KW - equilibrium crystal shape

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84901268733&partnerID=8YFLogxK

U2 - 10.1002/pip.2290

DO - 10.1002/pip.2290

M3 - Article

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SP - 574

EP - 580

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

Crystal growth and equilibrium crystal shapes of silicon in the melt

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