Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Yimin Chen; Guoxiang Wang; Xiang Shen; Tiefeng Xu; R. P. Wang; Liangcai Wu; Yegang Lu; Junjian Li; Shixun Dai; Qiuhua Nie

doi:10.1039/c3ce42024h

Crystallization behaviors of Zn_xSb_100-x thin films for ultralong data retention phase change memory applications

Yimin Chen
, Guoxiang Wang
, Xiang Shen
, Tiefeng Xu
, R. P. Wang
, Liangcai Wu
, Yegang Lu
, Junjian Li
, Shixun Dai
, Qiuhua Nie

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Zn_xSb_100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

Original language	English
Pages (from-to)	757-762
Number of pages	6
Journal	CrystEngComm
Volume	16
Issue number	5
DOIs	https://doi.org/10.1039/c3ce42024h
Publication status	Published - 7 Feb 2014

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title = "Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications",

abstract = "ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (\textasciitilde{}257 °C), larger crystalline activation energy (\textasciitilde{}5.63 eV), better 10 year-data-retention (\textasciitilde{}201 °C) and lower melting temperature (\textasciitilde{}500 °C).",

author = "Yimin Chen and Guoxiang Wang and Xiang Shen and Tiefeng Xu and Wang, \{R. P.\} and Liangcai Wu and Yegang Lu and Junjian Li and Shixun Dai and Qiuhua Nie",

year = "2014",

month = feb,

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doi = "10.1039/c3ce42024h",

language = "English",

volume = "16",

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T1 - Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

AU - Chen, Yimin

AU - Wang, Guoxiang

AU - Shen, Xiang

AU - Xu, Tiefeng

AU - Wang, R. P.

AU - Wu, Liangcai

AU - Lu, Yegang

AU - Li, Junjian

AU - Dai, Shixun

AU - Nie, Qiuhua

PY - 2014/2/7

Y1 - 2014/2/7

N2 - ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

AB - ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

UR - https://www.scopus.com/pages/publications/84891459953

U2 - 10.1039/c3ce42024h

DO - 10.1039/c3ce42024h

M3 - Article

SN - 1466-8033

VL - 16

SP - 757

EP - 762

JO - CrystEngComm

JF - CrystEngComm

IS - 5

ER -

Crystallization behaviors of Zn_xSb_100-x thin films for ultralong data retention phase change memory applications

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