Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Yimin Chen; Guoxiang Wang; Xiang Shen; Tiefeng Xu; R. P. Wang; Liangcai Wu; Yegang Lu; Junjian Li; Shixun Dai; Qiuhua Nie

doi:10.1039/c3ce42024h

Crystallization behaviors of Zn_xSb_100-x thin films for ultralong data retention phase change memory applications

Yimin Chen, Guoxiang Wang, Xiang Shen, Tiefeng Xu, R. P. Wang, Liangcai Wu, Yegang Lu, Junjian Li, Shixun Dai, Qiuhua Nie

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Zn_xSb_100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

Original language	English
Pages (from-to)	757-762
Number of pages	6
Journal	CrystEngComm
Volume	16
Issue number	5
DOIs	https://doi.org/10.1039/c3ce42024h
Publication status	Published - 7 Feb 2014

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title = "Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications",

abstract = "ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (\textasciitilde{}257 °C), larger crystalline activation energy (\textasciitilde{}5.63 eV), better 10 year-data-retention (\textasciitilde{}201 °C) and lower melting temperature (\textasciitilde{}500 °C).",

author = "Yimin Chen and Guoxiang Wang and Xiang Shen and Tiefeng Xu and Wang, \{R. P.\} and Liangcai Wu and Yegang Lu and Junjian Li and Shixun Dai and Qiuhua Nie",

year = "2014",

month = feb,

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doi = "10.1039/c3ce42024h",

language = "English",

volume = "16",

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T1 - Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

AU - Chen, Yimin

AU - Wang, Guoxiang

AU - Shen, Xiang

AU - Xu, Tiefeng

AU - Wang, R. P.

AU - Wu, Liangcai

AU - Lu, Yegang

AU - Li, Junjian

AU - Dai, Shixun

AU - Nie, Qiuhua

PY - 2014/2/7

Y1 - 2014/2/7

N2 - ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

AB - ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

UR - https://www.scopus.com/pages/publications/84891459953

U2 - 10.1039/c3ce42024h

DO - 10.1039/c3ce42024h

M3 - Article

SN - 1466-8033

VL - 16

SP - 757

EP - 762

JO - CrystEngComm

JF - CrystEngComm

IS - 5

ER -

Crystallization behaviors of Zn_xSb_100-x thin films for ultralong data retention phase change memory applications

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