Crystallization characteristics of Mg-doped Ge                         2                         Sb                          2                         Te                         5                          films for phase change memory applications

Jing Fu; Xiang Shen; Qiuhua Nie; Guoxiang Wang; Liangcai Wu; Shixun Dai; Tiefeng Xu; R. P. Wang

doi:10.1016/j.apsusc.2012.09.181

Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications

Jing Fu, Xiang Shen^*, Qiuhua Nie, Guoxiang Wang, Liangcai Wu, Shixun Dai, Tiefeng Xu, R. P. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Mg-doped Ge ₂ Sb ₂ Te ₅ (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent MgSb and MgTe bonds contribute to the enhanced thermal stability in Mg-doped GST films.

Original language	English
Pages (from-to)	269-272
Number of pages	4
Journal	Applied Surface Science
Volume	264
DOIs	https://doi.org/10.1016/j.apsusc.2012.09.181
Publication status	Published - 1 Jan 2013

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Fu, J., Shen, X., Nie, Q., Wang, G., Wu, L., Dai, S., Xu, T., & Wang, R. P. (2013). Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications Applied Surface Science, 264, 269-272. https://doi.org/10.1016/j.apsusc.2012.09.181

Fu, Jing ; Shen, Xiang ; Nie, Qiuhua et al. / Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications In: Applied Surface Science. 2013 ; Vol. 264. pp. 269-272.

@article{cedddb455063441cb56dfba2906f6d8c,

title = " Crystallization characteristics of Mg-doped Ge 2 Sb 2 Te 5 films for phase change memory applications ",

abstract = " Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent MgSb and MgTe bonds contribute to the enhanced thermal stability in Mg-doped GST films.",

keywords = "Electrical properties, Phase transformation, Thin films, XRD",

author = "Jing Fu and Xiang Shen and Qiuhua Nie and Guoxiang Wang and Liangcai Wu and Shixun Dai and Tiefeng Xu and Wang, {R. P.}",

year = "2013",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2012.09.181",

language = "English",

volume = "264",

pages = "269--272",

journal = "Applied Surface Science",

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Fu, J, Shen, X, Nie, Q, Wang, G, Wu, L, Dai, S, Xu, T & Wang, RP 2013, ' Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications ', Applied Surface Science, vol. 264, pp. 269-272. https://doi.org/10.1016/j.apsusc.2012.09.181

Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications . / Fu, Jing; Shen, Xiang; Nie, Qiuhua et al.
In: Applied Surface Science, Vol. 264, 01.01.2013, p. 269-272.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Crystallization characteristics of Mg-doped Ge 2 Sb 2 Te 5 films for phase change memory applications

AU - Fu, Jing

AU - Shen, Xiang

AU - Nie, Qiuhua

AU - Wang, Guoxiang

AU - Wu, Liangcai

AU - Dai, Shixun

AU - Xu, Tiefeng

AU - Wang, R. P.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent MgSb and MgTe bonds contribute to the enhanced thermal stability in Mg-doped GST films.

AB - Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent MgSb and MgTe bonds contribute to the enhanced thermal stability in Mg-doped GST films.

KW - Electrical properties

KW - Phase transformation

KW - Thin films

KW - XRD

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U2 - 10.1016/j.apsusc.2012.09.181

DO - 10.1016/j.apsusc.2012.09.181

M3 - Article

SN - 0169-4332

VL - 264

SP - 269

EP - 272

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Fu J, Shen X, Nie Q, Wang G, Wu L, Dai S et al. Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications Applied Surface Science. 2013 Jan 1;264:269-272. doi: 10.1016/j.apsusc.2012.09.181

Crystallization characteristics of Mg-doped Ge ₂ Sb ₂ Te ₅ films for phase change memory applications

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