CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON.

E. Nygren; J. S. Williams; A. Pogany; R. G. Elliman; G. L. Olson; J. C. McCallum

CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON.

E. Nygren^*, J. S. Williams, A. Pogany, R. G. Elliman, G. L. Olson, J. C. McCallum

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

18 Citations (Scopus)

Abstract

The annealing behavior of In** plus -implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentration greater than 0. 5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Michael O. Thompson, S.Thomas Picraux, James S. Williams
Publisher	Materials Research Soc
Pages	307-317
Number of pages	11
ISBN (Print)	0931837405
Publication status	Published - 1987
Externally published	Yes
Event	Beam-Solid Interact and Transient Processes - Boston, MA, USA Duration: 1 Dec 1986 → 4 Dec 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	74
ISSN (Print)	0272-9172

Conference

Conference	Beam-Solid Interact and Transient Processes
City	Boston, MA, USA
Period	1/12/86 → 4/12/86

Cite this

@inproceedings{e36fe0090cfa4761a9d9a8a5a75f9004,

title = "CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON.",

abstract = "The annealing behavior of In** plus -implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentration greater than 0. 5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.",

author = "E. Nygren and Williams, {J. S.} and A. Pogany and Elliman, {R. G.} and Olson, {G. L.} and McCallum, {J. C.}",

year = "1987",

language = "English",

isbn = "0931837405",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "307--317",

editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",

booktitle = "Materials Research Society Symposia Proceedings",

note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",

}

Nygren, E, Williams, JS, Pogany, A, Elliman, RG, Olson, GL & McCallum, JC 1987, CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 74, Materials Research Soc, pp. 307-317, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 1/12/86.

CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON. / Nygren, E.; Williams, J. S.; Pogany, A. et al.
Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Materials Research Soc, 1987. p. 307-317 (Materials Research Society Symposia Proceedings; Vol. 74).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON.

AU - Nygren, E.

AU - Williams, J. S.

AU - Pogany, A.

AU - Elliman, R. G.

AU - Olson, G. L.

AU - McCallum, J. C.

PY - 1987

Y1 - 1987

N2 - The annealing behavior of In** plus -implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentration greater than 0. 5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.

AB - The annealing behavior of In** plus -implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentration greater than 0. 5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0023547804&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023547804

SN - 0931837405

T3 - Materials Research Society Symposia Proceedings

SP - 307

EP - 317

BT - Materials Research Society Symposia Proceedings

A2 - Thompson, Michael O.

A2 - Picraux, S.Thomas

A2 - Williams, James S.

PB - Materials Research Soc

T2 - Beam-Solid Interact and Transient Processes

Y2 - 1 December 1986 through 4 December 1986

ER -

CRYSTALLIZATION OF INDIUM IMPLANTED AMORPHOUS SILICON.

Abstract

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Conference

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