Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

Mohanchand Paladugu; Jin Zou; Ya Nan Guo; Xin Zhang; Hannah J. Joyce; Qiang Gao; H. Hoe Tan; C. Jagadish; Yong Kim

doi:10.1063/1.3103265

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

Mohanchand Paladugu, Jin Zou^*, Ya Nan Guo, Xin Zhang, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, C. Jagadish, Yong Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices.

Original language	English
Article number	073503
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3103265
Publication status	Published - 2009

Access to Document

10.1063/1.3103265

Cite this

@article{4efa000c3d8545428fdff416ec8dea89,

title = "Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures",

abstract = "The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices.",

author = "Mohanchand Paladugu and Jin Zou and Guo, {Ya Nan} and Xin Zhang and Joyce, {Hannah J.} and Qiang Gao and Tan, {H. Hoe} and C. Jagadish and Yong Kim",

year = "2009",

doi = "10.1063/1.3103265",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

AU - Paladugu, Mohanchand

AU - Zou, Jin

AU - Guo, Ya Nan

AU - Zhang, Xin

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, C.

AU - Kim, Yong

PY - 2009

Y1 - 2009

N2 - The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices.

AB - The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices.

UR - http://www.scopus.com/inward/record.url?scp=65249152389&partnerID=8YFLogxK

U2 - 10.1063/1.3103265

DO - 10.1063/1.3103265

M3 - Article

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073503

ER -

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this