TY - GEN
T1 - CuI-TiO Composite Thin Film for Flexible Electronic Applications
AU - Raj, Vidur
AU - Lockrey, Mark
AU - Liu, Rong
AU - Tan, Hark Hoe
AU - Jagadish, Chennupati
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - Copper iodide (CuI) is a p-type transparent conductor that can be synthesized and doped at low temperature (≤ 100 °C) while maintaining its high-conductivity and high optical transmittance (> 75 %). The realization of such simultaneously high conductivity and transparency makes CuI useful for applications in both active and passive flexible electronics. However, a few of the major disadvantages of CuI include its optical and electronic stability at ambient atmosphere and reduced transparency with iodine doping. In this report, instead of using pure CuI, we fabricate CuI-TiO composite thin films which are highly transparent and stable at ambient conditions whilst maintaining degenerate p-type conductivity. The CuI-TiO composite film is >80 % transparent (450- 2000 nm range), highly conducting ( 77 S/cm), heavily doped (> 1.2 × 1020 /cm3), with a mobility of 3.5 cm2V-1s-1.
AB - Copper iodide (CuI) is a p-type transparent conductor that can be synthesized and doped at low temperature (≤ 100 °C) while maintaining its high-conductivity and high optical transmittance (> 75 %). The realization of such simultaneously high conductivity and transparency makes CuI useful for applications in both active and passive flexible electronics. However, a few of the major disadvantages of CuI include its optical and electronic stability at ambient atmosphere and reduced transparency with iodine doping. In this report, instead of using pure CuI, we fabricate CuI-TiO composite thin films which are highly transparent and stable at ambient conditions whilst maintaining degenerate p-type conductivity. The CuI-TiO composite film is >80 % transparent (450- 2000 nm range), highly conducting ( 77 S/cm), heavily doped (> 1.2 × 1020 /cm3), with a mobility of 3.5 cm2V-1s-1.
UR - http://www.scopus.com/inward/record.url?scp=85066735855&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2018.8715246
DO - 10.1109/COMMAD.2018.8715246
M3 - Conference contribution
T3 - 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
SP - 22
EP - 23
BT - 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
Y2 - 9 December 2018 through 13 December 2018
ER -