Damage enhancement effect in silicon implanted with molecular ions

Cheng Lu Lin; Gen Qing Yang; Zi Wei Fang; Xiao Qin Li; Shi Chang Zou; J. Gyulai; R. G. Elliman

Damage enhancement effect in silicon implanted with molecular ions

Cheng Lu Lin^*, Gen Qing Yang, Zi Wei Fang, Xiao Qin Li, Shi Chang Zou, J. Gyulai, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P₂⁺ molecular ions and P⁺ atomic ions. The dependence of damage enhancement effect of P₂⁺ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.

Original language	English
Pages (from-to)	235-242
Number of pages	8
Journal	Science in China (Scientia Sinica) Series A
Volume	36
Issue number	2
Publication status	Published - Feb 1993
Externally published	Yes

Cite this

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title = "Damage enhancement effect in silicon implanted with molecular ions",

abstract = "This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.",

keywords = "damage enhancement, molecular ion implantation, silicon",

author = "Lin, \{Cheng Lu\} and Yang, \{Gen Qing\} and Fang, \{Zi Wei\} and Li, \{Xiao Qin\} and Zou, \{Shi Chang\} and J. Gyulai and Elliman, \{R. G.\}",

year = "1993",

month = feb,

language = "English",

volume = "36",

pages = "235--242",

journal = "Science in China (Scientia Sinica) Series A",

issn = "1001-6511",

publisher = "Science Press (China)",

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TY - JOUR

T1 - Damage enhancement effect in silicon implanted with molecular ions

AU - Lin, Cheng Lu

AU - Yang, Gen Qing

AU - Fang, Zi Wei

AU - Li, Xiao Qin

AU - Zou, Shi Chang

AU - Gyulai, J.

AU - Elliman, R. G.

PY - 1993/2

Y1 - 1993/2

N2 - This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.

AB - This paper reports a comparison between the two kinds of damage behavior in silicon implanted with P2+ molecular ions and P+ atomic ions. The dependence of damage enhancement effect of P2+ implanted silicon on ion doses, energies and target temperatures, and their annealing behavior in subsequent thermal anneal process are investigated systematically. A multiple collision model has been developed to elucidate the mechanism of the damage enhancement effect.

KW - damage enhancement

KW - molecular ion implantation

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=43949171735&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:43949171735

SN - 1001-6511

VL - 36

SP - 235

EP - 242

JO - Science in China (Scientia Sinica) Series A

JF - Science in China (Scientia Sinica) Series A

IS - 2

ER -

Damage enhancement effect in silicon implanted with molecular ions

Abstract

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