Damage formation, amorphization and crystallization in semiconductors at elevated temperatures

James S. Williams*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

    3 Citations (Scopus)

    Abstract

    This chapter focusses on damage build up, amorphization and crystallization processes in a range of semiconductors under irradiation conditions close to the critical temperature for amorphization where small changes in ion fluence, ion flux, ion mass and irradiation temperature have a strong effect on the damage level and nature of the residual disorder. Layer-by-layer amorphization (IBIIA) and ion-beam-induced epitaxial crystallization (IBIEC) phenomena are also highlighted as well as anomalous processes such as ion-induced swelling, porosity and surface erosion.

    Original languageEnglish
    Title of host publicationSpringer Series in Surface Sciences
    PublisherSpringer Verlag
    Pages243-285
    Number of pages43
    DOIs
    Publication statusPublished - 2016

    Publication series

    NameSpringer Series in Surface Sciences
    Volume61
    ISSN (Print)0931-5195

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