Damage tolerance of Ti                         3                         SiC                         2                          to high energy iodine irradiation

Lei Zhang; Q. Qi; L. Q. Shi; D. J. O'Connor; B. V. King; E. H. Kisi; D. K. Venkatachalam

doi:10.1016/j.apsusc.2012.03.022

Damage tolerance of Ti ₃ SiC ₂ to high energy iodine irradiation

Lei Zhang, Q. Qi, L. Q. Shi^*, D. J. O'Connor, B. V. King, E. H. Kisi, D. K. Venkatachalam

^*Corresponding author for this work

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82 Citations (Scopus)

Abstract

The microstructure of high fluence 2 MeV I ²⁺ irradiated Ti ₃ SiC ₂ has been studied by grazing incident X-ray diffraction (GIXRD) using synchrotron radiation. The shift and broadening of the observed diffraction peaks are due to a variety of defects ranging from atomic to micron scale in size. The observation of the surface micrograph reveals the microcrack formation at grain boundaries due to high irradiation damage. The Raman spectrum of Ti ₃ SiC ₂ was measured and compared with that of TiC _0.67 . It was found that a TiC nanocrystalline phase was formed under the high dose irradiation. However, a complete decomposition by irradiation did not take place even at 10.3 dpa. Post irradiation annealing to temperatures of 500-800°C results in crystal regrowth of Ti ₃ SiC ₂ and TiC phases.

Original language	English
Pages (from-to)	6281-6287
Number of pages	7
Journal	Applied Surface Science
Volume	258
Issue number	17
DOIs	https://doi.org/10.1016/j.apsusc.2012.03.022
Publication status	Published - 15 Jun 2012

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10.1016/j.apsusc.2012.03.022

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Zhang, L., Qi, Q., Shi, L. Q., O'Connor, D. J., King, B. V., Kisi, E. H., & Venkatachalam, D. K. (2012). Damage tolerance of Ti ₃ SiC ₂ to high energy iodine irradiation Applied Surface Science, 258(17), 6281-6287. https://doi.org/10.1016/j.apsusc.2012.03.022

@article{204ed2743ec7481ab4f73dd6f44fb6b1,

title = " Damage tolerance of Ti 3 SiC 2 to high energy iodine irradiation ",

abstract = " The microstructure of high fluence 2 MeV I 2+ irradiated Ti 3 SiC 2 has been studied by grazing incident X-ray diffraction (GIXRD) using synchrotron radiation. The shift and broadening of the observed diffraction peaks are due to a variety of defects ranging from atomic to micron scale in size. The observation of the surface micrograph reveals the microcrack formation at grain boundaries due to high irradiation damage. The Raman spectrum of Ti 3 SiC 2 was measured and compared with that of TiC 0.67 . It was found that a TiC nanocrystalline phase was formed under the high dose irradiation. However, a complete decomposition by irradiation did not take place even at 10.3 dpa. Post irradiation annealing to temperatures of 500-800°C results in crystal regrowth of Ti 3 SiC 2 and TiC phases.",

keywords = "Ion irradiation, MAX phase, X-ray diffraction",

author = "Lei Zhang and Q. Qi and Shi, {L. Q.} and O'Connor, {D. J.} and King, {B. V.} and Kisi, {E. H.} and Venkatachalam, {D. K.}",

year = "2012",

month = jun,

day = "15",

doi = "10.1016/j.apsusc.2012.03.022",

language = "English",

volume = "258",

pages = "6281--6287",

journal = "Applied Surface Science",

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publisher = "Elsevier B.V.",

number = "17",

}

Zhang, L, Qi, Q, Shi, LQ, O'Connor, DJ, King, BV, Kisi, EH & Venkatachalam, DK 2012, ' Damage tolerance of Ti ₃ SiC ₂ to high energy iodine irradiation ', Applied Surface Science, vol. 258, no. 17, pp. 6281-6287. https://doi.org/10.1016/j.apsusc.2012.03.022

Damage tolerance of Ti ₃ SiC ₂ to high energy iodine irradiation . / Zhang, Lei; Qi, Q.; Shi, L. Q. et al.
In: Applied Surface Science, Vol. 258, No. 17, 15.06.2012, p. 6281-6287.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Damage tolerance of Ti 3 SiC 2 to high energy iodine irradiation

AU - Zhang, Lei

AU - Qi, Q.

AU - Shi, L. Q.

AU - O'Connor, D. J.

AU - King, B. V.

AU - Kisi, E. H.

AU - Venkatachalam, D. K.

PY - 2012/6/15

Y1 - 2012/6/15

N2 - The microstructure of high fluence 2 MeV I 2+ irradiated Ti 3 SiC 2 has been studied by grazing incident X-ray diffraction (GIXRD) using synchrotron radiation. The shift and broadening of the observed diffraction peaks are due to a variety of defects ranging from atomic to micron scale in size. The observation of the surface micrograph reveals the microcrack formation at grain boundaries due to high irradiation damage. The Raman spectrum of Ti 3 SiC 2 was measured and compared with that of TiC 0.67 . It was found that a TiC nanocrystalline phase was formed under the high dose irradiation. However, a complete decomposition by irradiation did not take place even at 10.3 dpa. Post irradiation annealing to temperatures of 500-800°C results in crystal regrowth of Ti 3 SiC 2 and TiC phases.

AB - The microstructure of high fluence 2 MeV I 2+ irradiated Ti 3 SiC 2 has been studied by grazing incident X-ray diffraction (GIXRD) using synchrotron radiation. The shift and broadening of the observed diffraction peaks are due to a variety of defects ranging from atomic to micron scale in size. The observation of the surface micrograph reveals the microcrack formation at grain boundaries due to high irradiation damage. The Raman spectrum of Ti 3 SiC 2 was measured and compared with that of TiC 0.67 . It was found that a TiC nanocrystalline phase was formed under the high dose irradiation. However, a complete decomposition by irradiation did not take place even at 10.3 dpa. Post irradiation annealing to temperatures of 500-800°C results in crystal regrowth of Ti 3 SiC 2 and TiC phases.

KW - Ion irradiation

KW - MAX phase

KW - X-ray diffraction

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U2 - 10.1016/j.apsusc.2012.03.022

DO - 10.1016/j.apsusc.2012.03.022

M3 - Article

SN - 0169-4332

VL - 258

SP - 6281

EP - 6287

JO - Applied Surface Science

JF - Applied Surface Science

IS - 17

ER -

Damage tolerance of Ti ₃ SiC ₂ to high energy iodine irradiation

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