Deep level properties of erbium implanted epitaxially grown SiGe

M. Mamor; F. D. Auret; S. A. Goodman; J. Brink; M. Hayes; F. Meyer; A. Vantomme; G. Langouche; P. N.K. Deenapanray

doi:10.1016/S0168-583X(98)00693-4

Deep level properties of erbium implanted epitaxially grown SiGe

M. Mamor, F. D. Auret^*, S. A. Goodman, J. Brink, M. Hayes, F. Meyer, A. Vantomme, G. Langouche, P. N.K. Deenapanray

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si_0.96Ge_0.04 during 180 keV erbium ion implantation (fluence -1×10¹⁰ cm^-2 ). Five defects with discrete energy levels, ranging from 0.17 to 0.59 eV below the conduction band, were introduced during Er ion implantation. These defects are compared to those introduced during He-ion etching and alpha particle irradiation. By comparing the DLTS spectra and DLTS signatures, it was noted that certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implanted SiGe. Photoluminescence in the 1.54 μm region due to the erbium implantation in Si_0.96Ge_0.04 was observed after a thermal treatment at 900°C for 30 s.

Original language	English
Pages (from-to)	523-527
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00693-4
Publication status	Published - 1999

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Mamor, M., Auret, F. D., Goodman, S. A., Brink, J., Hayes, M., Meyer, F., Vantomme, A., Langouche, G., & Deenapanray, P. N. K. (1999). Deep level properties of erbium implanted epitaxially grown SiGe. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148(1-4), 523-527. https://doi.org/10.1016/S0168-583X(98)00693-4

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title = "Deep level properties of erbium implanted epitaxially grown SiGe",

abstract = "We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si0.96Ge0.04 during 180 keV erbium ion implantation (fluence -1×1010 cm-2 ). Five defects with discrete energy levels, ranging from 0.17 to 0.59 eV below the conduction band, were introduced during Er ion implantation. These defects are compared to those introduced during He-ion etching and alpha particle irradiation. By comparing the DLTS spectra and DLTS signatures, it was noted that certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implanted SiGe. Photoluminescence in the 1.54 μm region due to the erbium implantation in Si0.96Ge0.04 was observed after a thermal treatment at 900°C for 30 s.",

keywords = "DLTS, Erbium implantation, PL, Schottky diodes, SiGe",

author = "M. Mamor and Auret, {F. D.} and Goodman, {S. A.} and J. Brink and M. Hayes and F. Meyer and A. Vantomme and G. Langouche and Deenapanray, {P. N.K.}",

year = "1999",

doi = "10.1016/S0168-583X(98)00693-4",

language = "English",

volume = "148",

pages = "523--527",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Deep level properties of erbium implanted epitaxially grown SiGe

AU - Mamor, M.

AU - Auret, F. D.

AU - Goodman, S. A.

AU - Brink, J.

AU - Hayes, M.

AU - Meyer, F.

AU - Vantomme, A.

AU - Langouche, G.

AU - Deenapanray, P. N.K.

PY - 1999

Y1 - 1999

N2 - We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si0.96Ge0.04 during 180 keV erbium ion implantation (fluence -1×1010 cm-2 ). Five defects with discrete energy levels, ranging from 0.17 to 0.59 eV below the conduction band, were introduced during Er ion implantation. These defects are compared to those introduced during He-ion etching and alpha particle irradiation. By comparing the DLTS spectra and DLTS signatures, it was noted that certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implanted SiGe. Photoluminescence in the 1.54 μm region due to the erbium implantation in Si0.96Ge0.04 was observed after a thermal treatment at 900°C for 30 s.

AB - We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si0.96Ge0.04 during 180 keV erbium ion implantation (fluence -1×1010 cm-2 ). Five defects with discrete energy levels, ranging from 0.17 to 0.59 eV below the conduction band, were introduced during Er ion implantation. These defects are compared to those introduced during He-ion etching and alpha particle irradiation. By comparing the DLTS spectra and DLTS signatures, it was noted that certain defects (Eer3, Eer4 and Eer5) are only observed in the Er implanted SiGe. Photoluminescence in the 1.54 μm region due to the erbium implantation in Si0.96Ge0.04 was observed after a thermal treatment at 900°C for 30 s.

KW - DLTS

KW - Erbium implantation

KW - PL

KW - Schottky diodes

KW - SiGe

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U2 - 10.1016/S0168-583X(98)00693-4

DO - 10.1016/S0168-583X(98)00693-4

M3 - Article

SN - 0168-583X

VL - 148

SP - 523

EP - 527

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Deep level properties of erbium implanted epitaxially grown SiGe

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