Deep level properties of erbium implanted epitaxially grown SiGe

M. Mamor, F. D. Auret*, S. A. Goodman, J. Brink, M. Hayes, F. Meyer, A. Vantomme, G. Langouche, P. N.K. Deenapanray

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    Fingerprint

    Dive into the research topics of 'Deep level properties of erbium implanted epitaxially grown SiGe'. Together they form a unique fingerprint.

    Material Science

    Chemical Engineering