Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

P. N.K. Deenapanray; F. D. Auret; M. C. Ridgway; S. A. Goodman; G. Myburg; J. B. Malherbe

doi:10.1063/1.368439

Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

P. N.K. Deenapanray^*, F. D. Auret, M. C. Ridgway, S. A. Goodman, G. Myburg, J. B. Malherbe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related.

Original language	English
Pages (from-to)	2565-2570
Number of pages	6
Journal	Journal of Applied Physics
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.368439
Publication status	Published - 1 Sept 1998

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title = "Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si",

abstract = "Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related.",

author = "Deenapanray, {P. N.K.} and Auret, {F. D.} and Ridgway, {M. C.} and Goodman, {S. A.} and G. Myburg and Malherbe, {J. B.}",

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T1 - Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

AU - Deenapanray, P. N.K.

AU - Auret, F. D.

AU - Ridgway, M. C.

AU - Goodman, S. A.

AU - Myburg, G.

AU - Malherbe, J. B.

PY - 1998/9/1

Y1 - 1998/9/1

N2 - Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related.

AB - Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related.

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DO - 10.1063/1.368439

M3 - Article

SN - 0021-8979

VL - 84

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EP - 2570

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

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