Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si
- P. N.K. Deenapanray*
- , F. D. Auret
- , M. C. Ridgway
- , S. A. Goodman
- , G. Myburg
- , J. B. Malherbe
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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