Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Ion implantation and plasma processing techniques are routinely used for the fabrication of semiconductor devices. In particular, these techniques employ low energy ions, which modify the electrical and optical properties of the semiconductor material, and, consequently, of the devices that are fabricated thereon, by creating defects in the semiconductor lattice. In this paper, we review our results on the electrical characterization of defects created in Si by low energy noble gas ions (He, Ne, and Ar) and hydrogen ions using deep level transient spectroscopy. The properties of defects introduced in Si_1-xGe_x during ion etching and electron beam evaporation of metal contacts are also reviewed.