Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO₂-capped n-type GaAs layers grown by metalorganic chemical vapour deposition

P. N.K. Deenapanray^*, M. Lay, D. Åberg, H. H. Tan, B. G. Svensson, F. D. Auret, C. Jagadish

^*Corresponding author for this work

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