Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers

Defect engineering in annealed n-type GaAs epilayers using SiO₂/Si₃N₄ stacking layers

Prakash Deenapanray, Anthony H Martin, Chennupati Jagadish

Research output: Contribution to journal › Article › peer-review

@article{81995458fab74e8a9f4b3a1335298228,

title = "Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers",

author = "Prakash Deenapanray and Martin, {Anthony H} and Chennupati Jagadish",

year = "2001",

language = "English",

volume = "79",

pages = "2561--2563",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics (AIP)",

number = "16",

}