Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Qiang Gao; Hark Hoe Tan; Chennupati Jagadish; Prakash N.K. Deenapanray

doi:10.1143/jjap.42.6827

Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Qiang Gao^*, Hark Hoe Tan, Chennupati Jagadish, Prakash N.K. Deenapanray

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (E_V + 0.22 eV), HA2 (E_V + 0.32eV), HA3 (E_V + 0.38eV), HA4 (E_V + 0.39eV), HA5 (E_V + 0.55 eV), and HA6 (E_V + 0.78 eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.

Original language	English
Pages (from-to)	6827-6832
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	11
DOIs	https://doi.org/10.1143/jjap.42.6827
Publication status	Published - Nov 2003

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title = "Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition",

abstract = "We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV), HA5 (EV + 0.55 eV), and HA6 (EV + 0.78 eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.",

keywords = "DLTS, Defects, GaAsN epilayer, Hole traps, MOCVD",

author = "Qiang Gao and Tan, {Hark Hoe} and Chennupati Jagadish and Deenapanray, {Prakash N.K.}",

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language = "English",

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AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Deenapanray, Prakash N.K.

PY - 2003/11

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N2 - We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV), HA5 (EV + 0.55 eV), and HA6 (EV + 0.78 eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.

AB - We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV), HA5 (EV + 0.55 eV), and HA6 (EV + 0.78 eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.

KW - DLTS

KW - Defects

KW - GaAsN epilayer

KW - Hole traps

KW - MOCVD

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M3 - Article

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VL - 42

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 11

ER -

Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

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