Abstract
We report the epitaxial growth of defect-free zinc-blende structured InAs nanowires on GaAs{111}B substrates using palladium catalysts in a metal-organic chemical vapor deposition reactor. Through detailed morphological, structural, and chemical characterizations using electron microscopy, it is found that these defect-free InAs nanowires grew along the 〈1̄1̄ 0〉 directions with four low-energy {111} faceted side walls and {1̄1̄3̄} nanowire/catalyst interfaces. It is anticipated that these defect-free 〈1̄1̄0〉 nanowires benefit from the fact that the nanowire/catalyst interfaces does not contain the {111} planes, and the nanowire growth direction is not along the 〈111〉 directions. This study provides an effective approach to control the crystal structure and quality of epitaxial III-V nanowires.
Original language | English |
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Pages (from-to) | 5744-5749 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 12 |
Issue number | 11 |
DOIs | |
Publication status | Published - 14 Nov 2012 |