@inproceedings{0222c0542d3949dc9a905856c94fae16,
title = "Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration",
abstract = "Low-temperature photoluminescence spectroscopy is applied to investigate the difference in luminescence spectra in phosphorous doped and boron doped Cz-Si wafers with different concentrations of thermal double donors. The thermal donors were created by annealing the wafers at 450°C for different periods of time. Phosphorous doped and boron doped samples with the same concentration of thermal donors show distinctly different peaks in their photoluminescence spectra. Phosphorous doped samples exhibit a thermal donor related peak at around 0.88 eV, which is not observed in p-type boron doped samples compensated by thermal donors. Instead, the boron doped samples have a distinct peak at around 0.79 eV. The relative intensity of the thermal donor related peak increases monotonically with the thermal donor concentration for the phosphorus-doped samples.",
keywords = "defects characterization, micro-photoluminescence spectra, silicon defects, thermal donors",
author = "Manjula Siriwardhana and Rougieux, {Fiacre E.} and Daniel MacDonald",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300685",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2652--2654",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
address = "United States",
}