Defects in Ge and Si caused by 1 MeV Si+ implantation

D. P. Hickey; Z. L. Bryan; K. S. Jones; R. G. Elliman; E. E. Haller

doi:10.1116/1.2834557

Defects in Ge and Si caused by 1 MeV Si⁺ implantation

D. P. Hickey^*, Z. L. Bryan, K. S. Jones, R. G. Elliman, E. E. Haller

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no {311} defect formation is observed for this nonamorphizing implant after annealing at temperatures between 350 and 850 °C. Instead, for the MeV implant, small dotlike defects are observed in Ge, which dissolve upon annealing between 650 and 750 °C for 10 min.

Original language	English
Pages (from-to)	425-429
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	1
DOIs	https://doi.org/10.1116/1.2834557
Publication status	Published - 2008

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abstract = "Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no {311} defect formation is observed for this nonamorphizing implant after annealing at temperatures between 350 and 850 °C. Instead, for the MeV implant, small dotlike defects are observed in Ge, which dissolve upon annealing between 650 and 750 °C for 10 min.",

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AU - Hickey, D. P.

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AU - Elliman, R. G.

AU - Haller, E. E.

PY - 2008

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N2 - Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no {311} defect formation is observed for this nonamorphizing implant after annealing at temperatures between 350 and 850 °C. Instead, for the MeV implant, small dotlike defects are observed in Ge, which dissolve upon annealing between 650 and 750 °C for 10 min.

AB - Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no {311} defect formation is observed for this nonamorphizing implant after annealing at temperatures between 350 and 850 °C. Instead, for the MeV implant, small dotlike defects are observed in Ge, which dissolve upon annealing between 650 and 750 °C for 10 min.

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ER -

Defects in Ge and Si caused by 1 MeV Si⁺ implantation

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