Abstract
Defects in silicon nanowires have been investigated using the electron spin resonance (ESR) method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and the weak line to the well-assigned E′ center. We argue that the assignment of the broad feature to Pb centers [A. Baumer, Appl. Phys. Lett. 85, 943 (2004)] is oversimplified, and its physical origins may include dangling bonds in amorphous silicon.
Original language | English |
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Article number | 142104 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 14 |
DOIs | |
Publication status | Published - 3 Apr 2006 |