Demonstration of c-Si Solar Cells with Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions

Thomas G. Allen; Marco Ernst; Christian Samundsett; Andres Cuevas

doi:10.1109/JPHOTOV.2015.2467968

Demonstration of c-Si Solar Cells with Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions

Thomas G. Allen, Marco Ernst, Christian Samundsett, Andres Cuevas

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Gallium oxide (Ga₂O₃) deposited by plasma-enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 10¹¹ cm^-2 eV^-1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminum oxide. In addition, Ga₂O₃ is used as a gallium source in a laser-doping process, resulting in a device efficiency of 19.2% and an open-circuit voltage of 658 mV in a partial rear contact p-type cell design.

Original language	English
Article number	7222371
Pages (from-to)	1586-1590
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2467968
Publication status	Published - 25 Aug 2015

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title = "Demonstration of c-Si Solar Cells with Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions",

abstract = "Gallium oxide (Ga2O3) deposited by plasma-enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 1011 cm-2 eV-1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminum oxide. In addition, Ga2O3 is used as a gallium source in a laser-doping process, resulting in a device efficiency of 19.2% and an open-circuit voltage of 658 mV in a partial rear contact p-type cell design.",

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T1 - Demonstration of c-Si Solar Cells with Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions

AU - Allen, Thomas G.

AU - Ernst, Marco

AU - Samundsett, Christian

AU - Cuevas, Andres

PY - 2015/8/25

Y1 - 2015/8/25

N2 - Gallium oxide (Ga2O3) deposited by plasma-enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 1011 cm-2 eV-1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminum oxide. In addition, Ga2O3 is used as a gallium source in a laser-doping process, resulting in a device efficiency of 19.2% and an open-circuit voltage of 658 mV in a partial rear contact p-type cell design.

AB - Gallium oxide (Ga2O3) deposited by plasma-enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 1011 cm-2 eV-1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminum oxide. In addition, Ga2O3 is used as a gallium source in a laser-doping process, resulting in a device efficiency of 19.2% and an open-circuit voltage of 658 mV in a partial rear contact p-type cell design.

KW - AlO

KW - GaO

KW - gallium oxide

KW - laser doping

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JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

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Demonstration of c-Si Solar Cells with Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions

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