Abstract
The optimal geometries for reducing the radiative recombination lifetime and thus enhancing the quantum efficiency of III-V semiconductor nanowires by coupling them to plasmonic nanoparticles are established. The quantum efficiency enhancement factor due to coupling to plasmonic nanoparticles reduces as the initial quality of the nanowire increases. Significant quantum efficiency enhancement is observed for semiconductors only within about 15 nm from the nanoparticle. It is also identified that the modes responsible for resonant enhancement in the quantum efficiency of an emitter in the nanowire are geometric resonances of surface plasmon polariton modes supported at the nanowire/nanoparticle interface. High field intensities resulting from the geometric resonances of surface plasmon polariton modes supported at a semiconductor nanowire/plasmonic nanoparticle interface can be used to increase the quantum efficiency of the semiconductor nanowire. The design considerations for such coupled systems are reviewed.
Original language | English |
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Pages (from-to) | 3964-3969 |
Number of pages | 6 |
Journal | Small |
Volume | 9 |
Issue number | 23 |
DOIs | |
Publication status | Published - 9 Dec 2013 |