Detailed analysis of absorption data for indium nitride

K. S.A. Butcher; M. Wintrebert-Fouquet; P. P.T. Chen; H. Timmers; S. K. Shrestha

doi:10.1016/j.mssp.2003.07.004

Detailed analysis of absorption data for indium nitride

K. S.A. Butcher^*
, M. Wintrebert-Fouquet
, P. P.T. Chen
, H. Timmers
, S. K. Shrestha

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.07.004
Publication status	Published - Oct 2003

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title = "Detailed analysis of absorption data for indium nitride",

abstract = "It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.",

keywords = "Absorption, Band gap, Deep level traps, Indium nitride",

author = "Butcher, \{K. S.A.\} and M. Wintrebert-Fouquet and Chen, \{P. P.T.\} and H. Timmers and Shrestha, \{S. K.\}",

year = "2003",

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language = "English",

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pages = "351--354",

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T1 - Detailed analysis of absorption data for indium nitride

AU - Butcher, K. S.A.

AU - Wintrebert-Fouquet, M.

AU - Chen, P. P.T.

AU - Timmers, H.

AU - Shrestha, S. K.

PY - 2003/10

Y1 - 2003/10

N2 - It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.

AB - It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.

KW - Absorption

KW - Band gap

KW - Deep level traps

KW - Indium nitride

UR - https://www.scopus.com/pages/publications/1642634100

U2 - 10.1016/j.mssp.2003.07.004

DO - 10.1016/j.mssp.2003.07.004

M3 - Article

SN - 1369-8001

VL - 6

SP - 351

EP - 354

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -

Detailed analysis of absorption data for indium nitride

Abstract

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