Determination of Carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning

Z. F. Li*, W. Lu, X. Q. Liu, X. S. Chen, S. C. Shen, Y. Fu, M. Willander, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Micro-photoluminescence (μ-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8 ± 0.3 μm has, therefore, been concluded.

    Original languageEnglish
    Pages (from-to)913-916
    Number of pages4
    JournalJournal of Electronic Materials
    Volume32
    Issue number8
    DOIs
    Publication statusPublished - Aug 2003

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