Determination of composition, thickness and growth rate profiles of MOCVD grown Hg-xCdxTe

S. P. Russo; G. N. Pain; P. N. Johnston; R. G. Elliman

doi:10.1016/0022-0248(93)90404-K

Determination of composition, thickness and growth rate profiles of MOCVD grown Hg_-xCd_xTe

S. P. Russo^*, G. N. Pain, P. N. Johnston, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) measurements have been performed on epitaxial Hg_1-xCd_xTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direction of gas flow in the MOCVD reactor cell. Continuous profiles of each property, over an area of 40×90 mm, have then been calculated by polynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on and below the cracking susceptor in the reactor cell.

Original language	English
Pages (from-to)	124-132
Number of pages	9
Journal	Journal of Crystal Growth
Volume	131
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(93)90404-K
Publication status	Published - Jul 1993

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@article{95e6798f17624dc0bdef19cd821904ab,

title = "Determination of composition, thickness and growth rate profiles of MOCVD grown Hg-xCdxTe",

abstract = "Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) measurements have been performed on epitaxial Hg1-xCdxTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direction of gas flow in the MOCVD reactor cell. Continuous profiles of each property, over an area of 40×90 mm, have then been calculated by polynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on and below the cracking susceptor in the reactor cell.",

author = "Russo, {S. P.} and Pain, {G. N.} and Johnston, {P. N.} and Elliman, {R. G.}",

year = "1993",

month = jul,

doi = "10.1016/0022-0248(93)90404-K",

language = "English",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Determination of composition, thickness and growth rate profiles of MOCVD grown Hg-xCdxTe

AU - Russo, S. P.

AU - Pain, G. N.

AU - Johnston, P. N.

AU - Elliman, R. G.

PY - 1993/7

Y1 - 1993/7

N2 - Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) measurements have been performed on epitaxial Hg1-xCdxTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direction of gas flow in the MOCVD reactor cell. Continuous profiles of each property, over an area of 40×90 mm, have then been calculated by polynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on and below the cracking susceptor in the reactor cell.

AB - Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) measurements have been performed on epitaxial Hg1-xCdxTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direction of gas flow in the MOCVD reactor cell. Continuous profiles of each property, over an area of 40×90 mm, have then been calculated by polynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on and below the cracking susceptor in the reactor cell.

UR - http://www.scopus.com/inward/record.url?scp=0027626356&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90404-K

DO - 10.1016/0022-0248(93)90404-K

M3 - Article

AN - SCOPUS:0027626356

SN - 0022-0248

VL - 131

SP - 124

EP - 132

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Determination of composition, thickness and growth rate profiles of MOCVD grown Hg_-xCd_xTe

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