Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements

Helmut Mäckel; Andrés Cuevas

Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements

Helmut Mäckel^*, Andrés Cuevas

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

25 Citations (Scopus)

Abstract

Bare, non-diffused silicon wafers of different resistivities and surface conditions have been analyzed with a spectral photoconductance technique. The surface recombination velocity has been calculated by fitting the measurements with a theoretical model. The main result is that the surface recombination velocity is not constant, but decreases with increased resistivity, both for n-type and p-type wafers. The surface recombination velocity was found to vary from ∼10 cm/s for 1000 Ωcm Si to ∼10⁵ cm/s for 0.3 Ωcm Si. These values are much lower than the previously assumed 'infinite' surface recombination velocity of 10⁶-10⁷ cm/s for bare silicon.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	71-74
Number of pages	4
Publication status	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

Cite this

Mäckel, H., & Cuevas, A. (2003). Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 71-74). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Mäckel, Helmut ; Cuevas, Andrés. / Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 71-74 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{6159f5cf04e748a5adeadc8c3b3729ab,

title = "Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements",

abstract = "Bare, non-diffused silicon wafers of different resistivities and surface conditions have been analyzed with a spectral photoconductance technique. The surface recombination velocity has been calculated by fitting the measurements with a theoretical model. The main result is that the surface recombination velocity is not constant, but decreases with increased resistivity, both for n-type and p-type wafers. The surface recombination velocity was found to vary from ∼10 cm/s for 1000 Ωcm Si to ∼105 cm/s for 0.3 Ωcm Si. These values are much lower than the previously assumed 'infinite' surface recombination velocity of 106-107 cm/s for bare silicon.",

author = "Helmut M{\"a}ckel and Andr{\'e}s Cuevas",

year = "2003",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "71--74",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Mäckel, H & Cuevas, A 2003, Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, pp. 71-74, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03.

Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements. / Mäckel, Helmut; Cuevas, Andrés.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 71-74 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements

AU - Mäckel, Helmut

AU - Cuevas, Andrés

PY - 2003

Y1 - 2003

N2 - Bare, non-diffused silicon wafers of different resistivities and surface conditions have been analyzed with a spectral photoconductance technique. The surface recombination velocity has been calculated by fitting the measurements with a theoretical model. The main result is that the surface recombination velocity is not constant, but decreases with increased resistivity, both for n-type and p-type wafers. The surface recombination velocity was found to vary from ∼10 cm/s for 1000 Ωcm Si to ∼105 cm/s for 0.3 Ωcm Si. These values are much lower than the previously assumed 'infinite' surface recombination velocity of 106-107 cm/s for bare silicon.

AB - Bare, non-diffused silicon wafers of different resistivities and surface conditions have been analyzed with a spectral photoconductance technique. The surface recombination velocity has been calculated by fitting the measurements with a theoretical model. The main result is that the surface recombination velocity is not constant, but decreases with increased resistivity, both for n-type and p-type wafers. The surface recombination velocity was found to vary from ∼10 cm/s for 1000 Ωcm Si to ∼105 cm/s for 0.3 Ωcm Si. These values are much lower than the previously assumed 'infinite' surface recombination velocity of 106-107 cm/s for bare silicon.

UR - http://www.scopus.com/inward/record.url?scp=6344262075&partnerID=8YFLogxK

M3 - Conference contribution

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 71

EP - 74

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Mäckel H, Cuevas A. Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 71-74. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements

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