Determination of thickness and composition of high-k dielectrics using high-energy electrons

P. L. Grande, M. Vos, D. K. Venkatachalam, S. K. Nandi, R. G. Elliman

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)


    We demonstrate the application of high-energy elastic electron backscattering to the analysis of thin (2-20 nm) HfO2 overlayers on oxidized Si substrates. The film composition and thickness are determined directly from elastic scattering peaks characteristic of each element. The stoichiometry of the films is determined with an accuracy of 5%-10%. The experimental results are corroborated by medium energy ions scattering and Rutherford backscattering spectrometry measurements, and clearly demonstrate the applicability of the technique for thin-film analysis. Significantly, the presented technique opens new possibilities for nm depth profiling with high spatial resolution in scanning electron microscopes.

    Original languageEnglish
    Article number071911
    JournalApplied Physics Letters
    Issue number7
    Publication statusPublished - 12 Aug 2013


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